by Nyrow, A., Sternemann, C., Sahle, Ch J., Hohl, A. and Zschintzsch-Dias, M., Schwamberger, A., Mende, K., Brinkmann, I., Sala, M. Moretti, Wagner, R., Meier, A., Voelklein, F. and Tolan, M.
Abstract:
Temperature induced changes of the local chemical structure of bulk amorphous GexSiOy are studied by Ge K-edge x-ray absorption near-edge spectroscopy and Si L-2/3-edge x-ray Raman scattering spectroscopy. Different processes are revealed which lead to formation of Ge regions embedded in a Si oxide matrix due to different initial structures of as-prepared samples, depending on their Ge/Si/O ratio and temperature treatment, eventually resulting in the occurrence of nanocrystals. Here, disproportionation of GeOx and SiOx regions and/or reduction of Ge oxides by pure Si or by a surrounding Si sub-oxide matrix can be employed to tune the size of Ge nanocrystals along with the chemical composition of the embedding matrix. This is important for the optimization of the electronic and luminescent properties of the material.
Reference:
Structural changes in amorphous GexSiOy on the way to nanocrystal formation (Nyrow, A., Sternemann, C., Sahle, Ch J., Hohl, A. and Zschintzsch-Dias, M., Schwamberger, A., Mende, K., Brinkmann, I., Sala, M. Moretti, Wagner, R., Meier, A., Voelklein, F. and Tolan, M.), In NANOTECHNOLOGY, IOP PUBLISHING LTD, volume 24, 2013.
Bibtex Entry:
@article{ ISI:000316989600010,
Author = {Nyrow, A. and Sternemann, C. and Sahle, Ch J. and Hohl, A. and
Zschintzsch-Dias, M. and Schwamberger, A. and Mende, K. and Brinkmann,
I. and Sala, M. Moretti and Wagner, R. and Meier, A. and Voelklein, F.
and Tolan, M.},
Title = {{Structural changes in amorphous GexSiOy on the way to nanocrystal
formation}},
Journal = {{NANOTECHNOLOGY}},
Year = {{2013}},
Volume = {{24}},
Number = {{16}},
Month = {{APR 26}},
Abstract = {{Temperature induced changes of the local chemical structure of bulk
amorphous GexSiOy are studied by Ge K-edge x-ray absorption near-edge
spectroscopy and Si L-2/3-edge x-ray Raman scattering spectroscopy.
Different processes are revealed which lead to formation of Ge regions
embedded in a Si oxide matrix due to different initial structures of
as-prepared samples, depending on their Ge/Si/O ratio and temperature
treatment, eventually resulting in the occurrence of nanocrystals. Here,
disproportionation of GeOx and SiOx regions and/or reduction of Ge
oxides by pure Si or by a surrounding Si sub-oxide matrix can be
employed to tune the size of Ge nanocrystals along with the chemical
composition of the embedding matrix. This is important for the
optimization of the electronic and luminescent properties of the
material.}},
Publisher = {{IOP PUBLISHING LTD}},
Address = {{TEMPLE CIRCUS, TEMPLE WAY, BRISTOL BS1 6BE, ENGLAND}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Nyrow, A (Corresponding Author), Tech Univ Dortmund, Fak Phys DELTA, D-44221 Dortmund, Germany.
Nyrow, A.; Sternemann, C.; Sahle, Ch J.; Schwamberger, A.; Mende, K.; Brinkmann, I.; Tolan, M., Tech Univ Dortmund, Fak Phys DELTA, D-44221 Dortmund, Germany.
Hohl, A., Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany.
Zschintzsch-Dias, M., Helmholtz Zentrum Dresden Rossendorf eV, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany.
Sala, M. Moretti, European Synchrotron Radiat Facil, F-38043 Grenoble, France.
Wagner, R., Berg Univ Wuppertal, Fachbereich C Abt Phys, D-42097 Wuppertal, Germany.
Meier, A.; Voelklein, F., Hsch RheinMain, Inst Mikrotechnologien IMtech, D-65428 Russelsheim, Germany.}},
DOI = {{10.1088/0957-4484/24/16/165701}},
Article-Number = {{165701}},
ISSN = {{0957-4484}},
Keywords-Plus = {{VISIBLE PHOTOLUMINESCENCE; GE NANOCRYSTALS; ALLOY-FILMS; SILICON
NANOCRYSTALS; THIN-FILMS; MICROCRYSTALS; MEMORY; LUMINESCENCE;
EXCITATIONS; DEFECTS}},
Research-Areas = {{Science & Technology - Other Topics; Materials Science; Physics}},
Web-of-Science-Categories = {{Nanoscience & Nanotechnology; Materials Science, Multidisciplinary;
Physics, Applied}},
Author-Email = {{alexander.nyrow@tu-dortmund.de}},
ResearcherID-Numbers = {{Sala, Marco Moretti/H-1034-2014
Moretti, Marco/AAF-9255-2019
Nyrow, Alexander/E-8681-2015
Sahle, Christoph/P-6715-2019
Sahle, Christoph/T-1326-2017
}},
ORCID-Numbers = {{Sala, Marco Moretti/0000-0002-9744-9976
Moretti, Marco/0000-0002-9744-9976
Sahle, Christoph/0000-0001-8645-3163
Sahle, Christoph/0000-0001-8645-3163
Sternemann, Christian/0000-0001-9415-1106}},
Funding-Acknowledgement = {{BMBFFederal Ministry of Education & Research (BMBF) {[}05K10PEC];
DFGGerman Research Foundation (DFG) {[}TO 169/14-1]; Academy of
FinlandAcademy of Finland {[}1256211]; University of Helsinki Research
Funds {[}490076]}},
Funding-Text = {{We acknowledge ESRF and DELTA for providing synchrotron radiation and
the HZDR accelerator group for providing the He ion beam for RBS
analysis. AN and KM would like to thank BMBF (05K10PEC) for financial
support. ChS acknowledges DFG (TO 169/14-1), Academy of Finland (No
1256211), and University of Helsinki Research Funds (No 490076). We
would like to thank A Sakko and F Djurabekova for providing the
calculations of Si sub-oxide XRS spectra and are grateful to M Wakagi
for the SiGe XANES data.}},
Number-of-Cited-References = {{49}},
Times-Cited = {{9}},
Usage-Count-Last-180-days = {{0}},
Usage-Count-Since-2013 = {{33}},
Journal-ISO = {{Nanotechnology}},
Doc-Delivery-Number = {{117YQ}},
Unique-ID = {{ISI:000316989600010}},
DA = {{2020-12-22}},
}
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