Sensitivity to hole doping of Cu L-3 resonant spectroscopies: Inelastic x-ray scattering and photoemission of La2-xSrxCuO4

@article{ ISI:000249155400028,
Author = {Ghiringhelli, G. and Brookes, N. B. and Dallera, C. and Tagliaferri, A.
   and Braicovich, L.},
Title = {{Sensitivity to hole doping of Cu L-3 resonant spectroscopies: Inelastic
   x-ray scattering and photoemission of La2-xSrxCuO4}},
Journal = {{PHYSICAL REVIEW B}},
Year = {{2007}},
Volume = {{76}},
Number = {{8}},
Month = {{AUG}},
Abstract = {{We present Cu L-3 edge resonant inelastic x-ray scattering (RIXS) and
   resonant x-ray photoemission spectroscopy (RXPS) of La2-xSrxCuO4 (x=0.0,
   0.13, and 0.27). RIXS is found to be much more sensitive to the hole
   doping level than resonant photoemission. RIXS allows us to determine
   the average energy of dd excitations of both undoped and hole doped
   sites. The trade-off between the Raman and non-Raman spectral features
   depends on the doping level strongly in RIXS but weakly in RXPS. These
   experimental findings are consistently interpreted within a cluster
   model: The role of nonlocal core hole screening in the intermediate
   state is shown to be crucial. Nonlocal screening has an impact also on
   the interpretation of the L-3 x-ray absorption spectra in cuprates.}},
Publisher = {{AMER PHYSICAL SOC}},
Address = {{ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Ghiringhelli, G (Corresponding Author), INFM COHERENTIA, CNR, Piazza Leonardo Da Vinci 32, I-20133 Milan, Italy.
   INFM COHERENTIA, CNR, I-20133 Milan, Italy.
   Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy.
   European Synchrotron Radiat Facil, F-38043 Grenoble, France.
   INFM SOFT, CNR, I-20133 Milan, Italy.
   Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy.
   CNISM, I-20133 Milan, Italy.}},
DOI = {{10.1103/PhysRevB.76.085116}},
Article-Number = {{085116}},
ISSN = {{2469-9950}},
EISSN = {{2469-9969}},
Keywords-Plus = {{CUPRATE SUPERCONDUCTORS; ELECTRONIC-STRUCTURE; RAMAN-SCATTERING;
   VALENCE-BAND; L-EDGE; ABSORPTION; BI2SR2CACU2O8; THRESHOLD; LA2CUO4}},
Research-Areas = {{Materials Science; Physics}},
Web-of-Science-Categories  = {{Materials Science, Multidisciplinary; Physics, Applied; Physics,
   Condensed Matter}},
ResearcherID-Numbers = {{Tagliaferri, Alberto/L-2903-2015
   Ghiringhelli, Giacomo/D-1159-2014
   Brookes, Nicholas B/C-6718-2019
   }},
ORCID-Numbers = {{Tagliaferri, Alberto/0000-0001-8001-1786
   Ghiringhelli, Giacomo/0000-0003-0867-7748
   Brookes, Nicholas B/0000-0002-1342-9530
   Braicovich, Lucio/0000-0001-6548-9140}},
Number-of-Cited-References = {{32}},
Times-Cited = {{11}},
Usage-Count-Last-180-days = {{0}},
Usage-Count-Since-2013 = {{13}},
Journal-ISO = {{Phys. Rev. B}},
Doc-Delivery-Number = {{206AD}},
Unique-ID = {{ISI:000249155400028}},
DA = {{2020-12-22}},
}