Nondestructive diagnostics of high-kappa dielectrics for advanced electronic devices

@article{ ISI:000241757500138,
Author = {Dallera, Claudia and Fracassi, Francesca and Braicovich, Lucio and
   Scarel, Giovanna and Wiemer, Claudia and Fanciulli, Marco and Pavia,
   Giuseppe and Cowie, Bruce C. C.},
Title = {{Nondestructive diagnostics of high-kappa dielectrics for advanced
   electronic devices}},
Journal = {{APPLIED PHYSICS LETTERS}},
Year = {{2006}},
Volume = {{89}},
Number = {{18}},
Month = {{OCT 30}},
Abstract = {{The authors present novel results on the interface between silicon and
   the high-kappa oxides Al2O3 and HfO2 grown by atomic layer deposition.
   The determination of the thickness of the interfacial layer between
   oxide and Si(100) is crucial to the evaluation of the performances of
   devices based on high-kappa dielectrics. They find through hard x-ray
   photoemission spectroscopy (HaXPES) that no interfacial layer forms
   between Al2O3 and Si(100) whereas almost one monolayer forms between
   HfO2 and Si(100). HaXPES does not involve any destructive procedure nor
   any sample preparation. High-energy photoemission could therefore be
   widely employed for the characterization of real devices. (c) 2006
   American Institute of Physics.}},
Publisher = {{AMER INST PHYSICS}},
Address = {{1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Dallera, C (Corresponding Author), Politecn Milan, Dipartimento Fis, CNR, INFM, Piazza L da Vinci 32, I-20133 Milan, Italy.
   Politecn Milan, Dipartimento Fis, CNR, INFM, I-20133 Milan, Italy.
   CNR, INFM, MDM Natl Lab, I-20041 Agrate Brianza, MI, Italy.
   STMicroelectronics, I-20041 Agrate Brianza, MI, Italy.
   European Synchrotron Radiat Facil, F-38043 Grenoble, France.}},
DOI = {{10.1063/1.2374843}},
Article-Number = {{183521}},
ISSN = {{0003-6951}},
EISSN = {{1077-3118}},
Keywords-Plus = {{ATOMIC-LAYER-DEPOSITION; OXIDE THIN-FILMS; ELECTRICAL-PROPERTIES; SI;
   MECHANISM; INSULATOR; SYSTEMS; AL2O3; ZRO2}},
Research-Areas = {{Physics}},
Web-of-Science-Categories  = {{Physics, Applied}},
Author-Email = {{claudia.dallera@fisi.polimi.it}},
ResearcherID-Numbers = {{Wiemer, Claudia/AAG-1979-2019
   Fanciulli, Marco/J-9940-2013
   }},
ORCID-Numbers = {{Fanciulli, Marco/0000-0003-2951-0859
   Wiemer, Claudia/0000-0001-9975-0458
   Braicovich, Lucio/0000-0001-6548-9140
   Pavia, Giuseppe/0000-0002-3730-5161}},
Number-of-Cited-References = {{28}},
Times-Cited = {{9}},
Usage-Count-Last-180-days = {{0}},
Usage-Count-Since-2013 = {{10}},
Journal-ISO = {{Appl. Phys. Lett.}},
Doc-Delivery-Number = {{101RG}},
Unique-ID = {{ISI:000241757500138}},
DA = {{2020-12-22}},
}