by Steeneken, PG, Tjeng, LH, Elfimov, I, Sawatzky, GA and Ghiringhelli, G, Brookes, NB and Huang, DJ
Abstract:
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.
Reference:
Exchange splitting and charge carrier spin polarization in EuO (Steeneken, PG, Tjeng, LH, Elfimov, I, Sawatzky, GA and Ghiringhelli, G, Brookes, NB and Huang, DJ), In PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, volume 88, 2002.
Bibtex Entry:
@article{ ISI:000173907500068,
Author = {Steeneken, PG and Tjeng, LH and Elfimov, I and Sawatzky, GA and
   Ghiringhelli, G and Brookes, NB and Huang, DJ},
Title = {{Exchange splitting and charge carrier spin polarization in EuO}},
Journal = {{PHYSICAL REVIEW LETTERS}},
Year = {{2002}},
Volume = {{88}},
Number = {{4}},
Month = {{JAN 28}},
Abstract = {{High quality thin films of the ferromagnetic semiconductor EuO have been
   prepared and were studied using a new form of spin-resolved
   spectroscopy. We observed large changes in the electronic structure
   across the Curie and metal-insulator transition temperature. We found
   that these are caused by the exchange splitting of the conduction band
   in the ferromagnetic state, which is as large as 0.6 eV. We also present
   strong evidence that the bottom of the conduction band consists mainly
   of majority spins. This implies that doped charge carriers in EuO are
   practically fully spin polarized.}},
Publisher = {{AMERICAN PHYSICAL SOC}},
Address = {{ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Steeneken, PG (Corresponding Author), Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, Nijenborgh 4, NL-9747 AG Groningen, Netherlands.
   Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, NL-9747 AG Groningen, Netherlands.
   Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany.
   Politecn Milan, INFM, Dipartimento Fis, I-20133 Milan, Italy.
   European Synchrotron Radiat Facil, F-38043 Grenoble, France.
   Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan.}},
DOI = {{10.1103/PhysRevLett.88.047201}},
Article-Number = {{047201}},
ISSN = {{0031-9007}},
Keywords-Plus = {{ELECTRON}},
Research-Areas = {{Physics}},
Web-of-Science-Categories  = {{Physics, Multidisciplinary}},
ResearcherID-Numbers = {{Tjeng, Liu Hao/B-8607-2019
   Steeneken, Peter/F-9744-2010
   Brookes, Nicholas B/C-6718-2019
   Sawatzky, George A/D-2997-2012
   /AAD-2465-2020
   Ghiringhelli, Giacomo/D-1159-2014}},
ORCID-Numbers = {{Tjeng, Liu Hao/0000-0002-0595-9312
   Steeneken, Peter/0000-0002-5764-1218
   Brookes, Nicholas B/0000-0002-1342-9530
   /0000-0002-5764-1218
   Ghiringhelli, Giacomo/0000-0003-0867-7748}},
Number-of-Cited-References = {{27}},
Times-Cited = {{190}},
Usage-Count-Last-180-days = {{2}},
Usage-Count-Since-2013 = {{65}},
Journal-ISO = {{Phys. Rev. Lett.}},
Doc-Delivery-Number = {{522QB}},
Unique-ID = {{ISI:000173907500068}},
DA = {{2020-12-22}},
}

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