by Steeneken, PG, Tjeng, LH, Elfimov, I, Sawatzky, GA and Ghiringhelli, G, Brookes, NB and Huang, DJ
Abstract:
High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.
Reference:
Exchange splitting and charge carrier spin polarization in EuO (Steeneken, PG, Tjeng, LH, Elfimov, I, Sawatzky, GA and Ghiringhelli, G, Brookes, NB and Huang, DJ), In PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, volume 88, 2002.
Bibtex Entry:
@article{ ISI:000173907500068, Author = {Steeneken, PG and Tjeng, LH and Elfimov, I and Sawatzky, GA and Ghiringhelli, G and Brookes, NB and Huang, DJ}, Title = {{Exchange splitting and charge carrier spin polarization in EuO}}, Journal = {{PHYSICAL REVIEW LETTERS}}, Year = {{2002}}, Volume = {{88}}, Number = {{4}}, Month = {{JAN 28}}, Abstract = {{High quality thin films of the ferromagnetic semiconductor EuO have been prepared and were studied using a new form of spin-resolved spectroscopy. We observed large changes in the electronic structure across the Curie and metal-insulator transition temperature. We found that these are caused by the exchange splitting of the conduction band in the ferromagnetic state, which is as large as 0.6 eV. We also present strong evidence that the bottom of the conduction band consists mainly of majority spins. This implies that doped charge carriers in EuO are practically fully spin polarized.}}, Publisher = {{AMERICAN PHYSICAL SOC}}, Address = {{ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}}, Type = {{Article}}, Language = {{English}}, Affiliation = {{Steeneken, PG (Corresponding Author), Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, Nijenborgh 4, NL-9747 AG Groningen, Netherlands. Univ Groningen, Ctr Mat Sci, Solid State Phys Lab, NL-9747 AG Groningen, Netherlands. Univ Cologne, Inst Phys 2, D-50937 Cologne, Germany. Politecn Milan, INFM, Dipartimento Fis, I-20133 Milan, Italy. European Synchrotron Radiat Facil, F-38043 Grenoble, France. Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan.}}, DOI = {{10.1103/PhysRevLett.88.047201}}, Article-Number = {{047201}}, ISSN = {{0031-9007}}, Keywords-Plus = {{ELECTRON}}, Research-Areas = {{Physics}}, Web-of-Science-Categories = {{Physics, Multidisciplinary}}, ResearcherID-Numbers = {{Tjeng, Liu Hao/B-8607-2019 Steeneken, Peter/F-9744-2010 Brookes, Nicholas B/C-6718-2019 Sawatzky, George A/D-2997-2012 /AAD-2465-2020 Ghiringhelli, Giacomo/D-1159-2014}}, ORCID-Numbers = {{Tjeng, Liu Hao/0000-0002-0595-9312 Steeneken, Peter/0000-0002-5764-1218 Brookes, Nicholas B/0000-0002-1342-9530 /0000-0002-5764-1218 Ghiringhelli, Giacomo/0000-0003-0867-7748}}, Number-of-Cited-References = {{27}}, Times-Cited = {{190}}, Usage-Count-Last-180-days = {{2}}, Usage-Count-Since-2013 = {{65}}, Journal-ISO = {{Phys. Rev. Lett.}}, Doc-Delivery-Number = {{522QB}}, Unique-ID = {{ISI:000173907500068}}, DA = {{2020-12-22}}, }
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