by Lin, Shih-Chieh, Kuo, Cheng-Tai, Shao, Yu-Cheng, Chuang, Yi-De, Geessinck, Jaap, Huijben, Mark, Rueff, Jean-Pascal, Graff, Ismael L., Conti, Giuseppina, Peng, Yingying, Bostwick, Aaron, Gullikson, Eric, Gullikson, Eric, Nemsak, Slavomir and Vailionis, Arturas, Gauquelin, Nicolas, Verbeeck, Johan and Ghiringhelli, Giacomo, Schneider, Claus M. and Fadley, Charles S.
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, the fundamental origins of the 2DES are still not understood, e.g., the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation on the depth profile of 2DES-relevant Ti 3d interface carriers using depthand element-specific techniques like standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within three unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first three unit cells of the opposing LaAlO3 layer (similar to 10 angstrom). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
Reference:
Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects (Lin, Shih-Chieh, Kuo, Cheng-Tai, Shao, Yu-Cheng, Chuang, Yi-De, Geessinck, Jaap, Huijben, Mark, Rueff, Jean-Pascal, Graff, Ismael L., Conti, Giuseppina, Peng, Yingying, Bostwick, Aaron, Gullikson, Eric, Gullikson, Eric, Nemsak, Slavomir and Vailionis, Arturas, Gauquelin, Nicolas, Verbeeck, Johan and Ghiringhelli, Giacomo, Schneider, Claus M. and Fadley, Charles S.), In PHYSICAL REVIEW MATERIALS, AMER PHYSICAL SOC, volume 4, 2020.
Bibtex Entry:
@article{ ISI:000592432200004,
Author = {Lin, Shih-Chieh and Kuo, Cheng-Tai and Shao, Yu-Cheng and Chuang, Yi-De
   and Geessinck, Jaap and Huijben, Mark and Rueff, Jean-Pascal and Graff,
   Ismael L. and Conti, Giuseppina and Peng, Yingying and Bostwick, Aaron
   and Gullikson, Eric and Gullikson, Eric and Nemsak, Slavomir and
   Vailionis, Arturas and Gauquelin, Nicolas and Verbeeck, Johan and
   Ghiringhelli, Giacomo and Schneider, Claus M. and Fadley, Charles S.},
Title = {{Two-dimensional electron systems in perovskite oxide heterostructures:
   Role of the polarity-induced substitutional defects}},
Journal = {{PHYSICAL REVIEW MATERIALS}},
Year = {{2020}},
Volume = {{4}},
Number = {{11}},
Month = {{NOV 19}},
Abstract = {{The discovery of a two-dimensional electron system (2DES) at the
   interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated
   enormous efforts in engineering interfacial functionalities with this
   type of oxide heterostructures. However, the fundamental origins of the
   2DES are still not understood, e.g., the microscopic mechanisms of
   coexisting interface conductivity and magnetism. Here we report a
   comprehensive spectroscopic investigation on the depth profile of
   2DES-relevant Ti 3d interface carriers using depthand element-specific
   techniques like standing-wave excited photoemission and resonant
   inelastic scattering. We found that one type of Ti 3d interface
   carriers, which give rise to the 2DES are located within three unit
   cells from the n-type interface in the SrTiO3 layer. Unexpectedly,
   another type of interface carriers, which are polarity-induced Ti-on-Al
   antisite defects, reside in the first three unit cells of the opposing
   LaAlO3 layer (similar to 10 angstrom). Our findings provide a
   microscopic picture of how the localized and mobile Ti 3d interface
   carriers distribute across the interface and suggest that the 2DES and
   2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations
   as originating from different types of interface carriers.}},
Publisher = {{AMER PHYSICAL SOC}},
Address = {{ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Kuo, CT (Corresponding Author), Univ Calif Davis, Dept Phys, Davis, CA 95616 USA.
   Kuo, CT (Corresponding Author), Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.
   Kuo, CT (Corresponding Author), SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA.
   Lin, Shih-Chieh; Kuo, Cheng-Tai; Conti, Giuseppina; Schneider, Claus M.; Fadley, Charles S., Univ Calif Davis, Dept Phys, Davis, CA 95616 USA.
   Lin, Shih-Chieh; Kuo, Cheng-Tai; Conti, Giuseppina; Gullikson, Eric; Fadley, Charles S., Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA.
   Kuo, Cheng-Tai, SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA.
   Shao, Yu-Cheng; Chuang, Yi-De; Bostwick, Aaron; Gullikson, Eric; Nemsak, Slavomir, Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA.
   Geessinck, Jaap; Huijben, Mark; Gauquelin, Nicolas, Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands.
   Geessinck, Jaap; Huijben, Mark; Gauquelin, Nicolas, Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands.
   Rueff, Jean-Pascal, Synchrotron SOLEIL, St Aubin BP48, F-91192 Gif Sur Yvette, France.
   Rueff, Jean-Pascal, Sorbonne Univ, CNRS, Lab Chim Phys Mat & Rayonnement, F-75005 Paris, France.
   Graff, Ismael L., Univ Fed Parana, Dept Phys, Curitiba, Parana, Brazil.
   Peng, Yingying; Ghiringhelli, Giacomo, Politecn Milan, CNR SPIN, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy.
   Peng, Yingying; Ghiringhelli, Giacomo, Politecn Milan, Dipartimento Fis, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy.
   Vailionis, Arturas, Stanford Univ, Stanford Nano Shared Facil, Stanford, CA 94305 USA.
   Vailionis, Arturas, Kaunas Univ Technol, Dept Phys, Studentu St 50, LT-51368 Kaunas, Lithuania.
   Gauquelin, Nicolas; Verbeeck, Johan, Univ Antwerp, Electron Microscopy Mat Sci EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
   Schneider, Claus M., Forschungszentrum Juulich, Peter Grunberg Inst PGI 6, D-52425 Juulich, Germany.
   Peng, Yingying, Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China.}},
DOI = {{10.1103/PhysRevMaterials.4.115002}},
Article-Number = {{115002}},
ISSN = {{2475-9953}},
Research-Areas = {{Materials Science}},
Web-of-Science-Categories  = {{Materials Science, Multidisciplinary}},
Author-Email = {{ctkuo@slac.stanford.edu}},
ResearcherID-Numbers = {{Graff, Ismael/N-3051-2013}},
ORCID-Numbers = {{Graff, Ismael/0000-0002-2518-2512}},
Funding-Acknowledgement = {{U.S. Department of Energy (DOE)United States Department of Energy (DOE)
   {[}DE-AC02-05CH11231]; DOE through the University of California,
   DavisUnited States Department of Energy (DOE) {[}DE-SC0014697]; Julich
   Research Center, Peter Grunberg Institute {[}PGI-6]; Brazilian
   scientific agency CNPQNational Council for Scientific and Technological
   Development (CNPq) {[}200789/2017-1]; Brazilian scientific agency CAPES
   (CAPES-PrInt-UFPR); Geconcentreerde Onderzoekacties (GOA) project
   ``Solarpaint{''} of the University of Antwerp; European Union's horizon
   2020 research and innovation program ES-TEEM3 {[}823717]; Hercules fund
   from the Flemish Government}},
Funding-Text = {{We thank G. M. De Luca and L. Braicovich for discussions. Charles S.
   Fadley was deceased on August 1, 2019. We are grateful for his
   significant contributions to this work. We thank Advanced Light Source
   for the access to Beamline 8.0.3 (qRIXS) via Proposal No. 09892 and
   beamline 7.0.2 (MAESTRO) via Proposal No. RA-00291 that contributed to
   the results presented here. We thank synchrotron SOLEIL (via Proposal
   No. 99180118) for the access to Beamline GALAXIES. This work was
   supported by the U.S. Department of Energy (DOE) under Contract No.
   DE-AC02-05CH11231 (Advanced Light Source), and by DOE Contract No.
   DE-SC0014697 through the University of California, Davis (S.-C.L.,
   C.-T.K, and C.S.F.), and from the Julich Research Center, Peter Grunberg
   Institute, PGI-6. I. L. G. wishes to thank Brazilian scientific agencies
   CNPQ (Project No. 200789/2017-1) and CAPES (CAPES-PrInt-UFPR) for their
   financial support. J.V. and N.G. acknowledge funding from the
   Geconcentreerde Onderzoekacties (GOA) project ``Solarpaint{''} of the
   University of Antwerp and the European Union's horizon 2020 research and
   innovation program ES-TEEM3 under grant agreement no 823717. The
   Qu-Ant-EM microscope used in this study was partly funded by the
   Hercules fund from the Flemish Government.}},
Number-of-Cited-References = {{55}},
Times-Cited = {{0}},
Usage-Count-Last-180-days = {{0}},
Usage-Count-Since-2013 = {{0}},
Journal-ISO = {{Phys. Rev. Mater.}},
Doc-Delivery-Number = {{OV8DB}},
Unique-ID = {{ISI:000592432200004}},
DA = {{2020-12-22}},
}

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