by Tse, John S., Hanfland, Michael, Flacau, Roxana, Desgreniers, Serge, Li, Zucheng, Mende, Kolja, Gilmore, Keith, Nyrow, Alexander, Sala, Marco Moretti and Sternemann, Christian
Abstract:
X-ray diffraction experiments at 80 K show that when silicon is compressed under hydrostatic conditions the intermediate high-pressure phases are bypassed leading to a direct transformation to the simple hexagonal structure at 17 GPa. A maximum entropy analysis of the diffraction patterns reveals dramatic alterations in the valence electron distribution from tetrahedral covalent bonding to localization in the interstitial sites and along the one-dimensional silicon atom chain running along adjacent hexagonal layers. Changes in the orbital character of the unoccupied states are confirmed using X-ray Raman scattering spectroscopy and theoretical Bethe-Salpeter equation calculations. This is the first direct observation indicating that the silicon valence electrons in 3s and 3p orbitals are transferred to the 3d orbitals at high density which proves that electrons of compressed elemental solids migrate from their native bonding configuration to interstitial regions.
Reference:
Pressure-Induced Changes on The Electronic Structure and Electron Topology in the Direct FCC -> SH Transformation of Silicon (Tse, John S., Hanfland, Michael, Flacau, Roxana, Desgreniers, Serge, Li, Zucheng, Mende, Kolja, Gilmore, Keith, Nyrow, Alexander, Sala, Marco Moretti and Sternemann, Christian), In JOURNAL OF PHYSICAL CHEMISTRY C, AMER CHEMICAL SOC, volume 118, 2014.
Bibtex Entry:
@article{ ISI:000330417100049,
Author = {Tse, John S. and Hanfland, Michael and Flacau, Roxana and Desgreniers,
Serge and Li, Zucheng and Mende, Kolja and Gilmore, Keith and Nyrow,
Alexander and Sala, Marco Moretti and Sternemann, Christian},
Title = {{Pressure-Induced Changes on The Electronic Structure and Electron
Topology in the Direct FCC -> SH Transformation of Silicon}},
Journal = {{JOURNAL OF PHYSICAL CHEMISTRY C}},
Year = {{2014}},
Volume = {{118}},
Number = {{2}},
Pages = {{1161-1166}},
Month = {{JAN 16}},
Abstract = {{X-ray diffraction experiments at 80 K show that when silicon is
compressed under hydrostatic conditions the intermediate high-pressure
phases are bypassed leading to a direct transformation to the simple
hexagonal structure at 17 GPa. A maximum entropy analysis of the
diffraction patterns reveals dramatic alterations in the valence
electron distribution from tetrahedral covalent bonding to localization
in the interstitial sites and along the one-dimensional silicon atom
chain running along adjacent hexagonal layers. Changes in the orbital
character of the unoccupied states are confirmed using X-ray Raman
scattering spectroscopy and theoretical Bethe-Salpeter equation
calculations. This is the first direct observation indicating that the
silicon valence electrons in 3s and 3p orbitals are transferred to the
3d orbitals at high density which proves that electrons of compressed
elemental solids migrate from their native bonding configuration to
interstitial regions.}},
Publisher = {{AMER CHEMICAL SOC}},
Address = {{1155 16TH ST, NW, WASHINGTON, DC 20036 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Tse, JS (Corresponding Author), Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada.
Tse, John S.; Li, Zucheng, Univ Saskatchewan, Dept Phys & Engn Phys, Saskatoon, SK S7N 5E2, Canada.
Hanfland, Michael; Gilmore, Keith; Sala, Marco Moretti, European Synchrotron Radiat Facil, F-38047 Grenoble, France.
Flacau, Roxana, Natl Res Council Canada, Canadian Neutron Beam Ctr, Chalk River, ON K0J 1J0, Canada.
Desgreniers, Serge, Univ Ottawa, Dept Phys, Lab Phys Solides Denses, Ottawa, ON K1N 6N5, Canada.
Mende, Kolja; Nyrow, Alexander; Sternemann, Christian, Tech Univ Dortmund, Fak Phys DELTA, D-44221 Dortmund, Germany.
Gilmore, Keith, Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China.}},
DOI = {{10.1021/jp408666q}},
ISSN = {{1932-7447}},
Keywords-Plus = {{AB-INITIO; DENSITY; PHASE; CRYSTAL; SPECTROSCOPY; SCATTERING; SI}},
Research-Areas = {{Chemistry; Science & Technology - Other Topics; Materials Science}},
Web-of-Science-Categories = {{Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science,
Multidisciplinary}},
Author-Email = {{John.Tse@usask.ca}},
ResearcherID-Numbers = {{Nyrow, Alexander/E-8681-2015
Sala, Marco Moretti/H-1034-2014
Moretti, Marco/AAF-9255-2019
}},
ORCID-Numbers = {{Sala, Marco Moretti/0000-0002-9744-9976
Moretti, Marco/0000-0002-9744-9976
Sternemann, Christian/0000-0001-9415-1106
Gilmore, Keith/0000-0002-9231-3551
Desgreniers, Serge/0000-0001-7353-6867}},
Funding-Acknowledgement = {{BMBFFederal Ministry of Education & Research (BMBF) {[}05K10PEC];
DOEUnited States Department of Energy (DOE) {[}DE-FG03-97ER45623];
National Natural Science Foundation of ChinaNational Natural Science
Foundation of China (NSFC) {[}11375127]; Natural Science Foundation of
Jiangsu ProvinceNatural Science Foundation of Jiangsu Province
{[}BK20130280]; DOE BESUnited States Department of Energy (DOE)
{[}DE-FG03-97ER45623]}},
Funding-Text = {{We kindly acknowledge ESRF for providing synchrotron radiation. We would
like to thank J.J. Rehr, M. Tolan, Ch.J. Sahle, and J.A. Soininen for
discussions and support. T. Brenner and L. Simonelli are acknowledged
for help with the XRS measurements. The BSE calculations were performed
on the Nano and Vulcan computer clusters of the Molecular Foundry at
Lawrence Berkeley National Lab, which is supported by the Office of
Science, Office of Basic Energy Sciences, of the U.S. Department of
Energy. Financial support was given by BMBF (05K10PEC) and DOE
(DE-FG03-97ER45623). K.G. has been supported by the National Natural
Science Foundation of China (Grant 11375127) and the Natural Science
Foundation of Jiangsu Province (Grant BK20130280) and in part by DOE BES
grant DE-FG03-97ER45623. Part of the calculations was performed at the
Westgrid Computing Cluster through a grant to JST.}},
Number-of-Cited-References = {{38}},
Times-Cited = {{17}},
Usage-Count-Last-180-days = {{0}},
Usage-Count-Since-2013 = {{26}},
Journal-ISO = {{J. Phys. Chem. C}},
Doc-Delivery-Number = {{299SX}},
Unique-ID = {{ISI:000330417100049}},
DA = {{2020-12-22}},
}
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