by Thakur, P., Bisogni, V., Cezar, J. C., Brookes, N. B. and Ghiringhelli, G., Gautam, S., Chae, K. H., Subramanian, M. and Jayavel, R. and Asokan, K.
Abstract:
The electronic structure of Cu-doped ZnO thin films, synthesized with a nominal composition of Zn1-xCuxO (x = 0.03, 0.05, 0.07, and 0.10) by using spray pyrolysis method, has been investigated using near-edge x-ray absorption fine structure (NEXAFS) experiments at the O K- and the Cu L-3.2-edges and resonant inelastic x-ray scattering (RIXS) measurements at Cu L-3,L-2 edge. The Zn1-xCuxO thin films showed single phase wurtzite-hexagonal like crystal structure and ferromagnetic behavior at room temperature (RT). The intensity of the pre-edge spectral feature at the O K- edge increases with the Cu concentration, which clearly reveals that there is strong hybridization of O 2p-Cu 3d orbitals in the ZnO matrix. Spectral features of the Cu L-3,L-2-edge NEXAFS exhibit multiple absorption peaks and appreciable x-ray magnetic circular dichroism signal that persists even at RT. These results demonstrate that Cu is in mixed valence state of Cu-2+,Cu-3+/Cu1+, substituting at the Zn site and Cu2+/ 3+ ions are magnetically polarized. RIXS experiments at Cu L-3 edge show strong d-d excitations due to localized nature of Cu ions in the ZnO matrix. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3372758]
Reference:
Electronic structure of Cu-doped ZnO thin films by x-ray absorption, magnetic circular dichroism, and resonant inelastic x-ray scattering (Thakur, P., Bisogni, V., Cezar, J. C., Brookes, N. B. and Ghiringhelli, G., Gautam, S., Chae, K. H., Subramanian, M. and Jayavel, R. and Asokan, K.), In JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, volume 107, 2010.
Bibtex Entry:
@article{ ISI:000278182400104,
Author = {Thakur, P. and Bisogni, V. and Cezar, J. C. and Brookes, N. B. and
Ghiringhelli, G. and Gautam, S. and Chae, K. H. and Subramanian, M. and
Jayavel, R. and Asokan, K.},
Title = {{Electronic structure of Cu-doped ZnO thin films by x-ray absorption,
magnetic circular dichroism, and resonant inelastic x-ray scattering}},
Journal = {{JOURNAL OF APPLIED PHYSICS}},
Year = {{2010}},
Volume = {{107}},
Number = {{10}},
Month = {{MAY 15}},
Abstract = {{The electronic structure of Cu-doped ZnO thin films, synthesized with a
nominal composition of Zn1-xCuxO (x = 0.03, 0.05, 0.07, and 0.10) by
using spray pyrolysis method, has been investigated using near-edge
x-ray absorption fine structure (NEXAFS) experiments at the O K- and the
Cu L-3.2-edges and resonant inelastic x-ray scattering (RIXS)
measurements at Cu L-3,L-2 edge. The Zn1-xCuxO thin films showed single
phase wurtzite-hexagonal like crystal structure and ferromagnetic
behavior at room temperature (RT). The intensity of the pre-edge
spectral feature at the O K- edge increases with the Cu concentration,
which clearly reveals that there is strong hybridization of O 2p-Cu 3d
orbitals in the ZnO matrix. Spectral features of the Cu L-3,L-2-edge
NEXAFS exhibit multiple absorption peaks and appreciable x-ray magnetic
circular dichroism signal that persists even at RT. These results
demonstrate that Cu is in mixed valence state of Cu-2+,Cu-3+/Cu1+,
substituting at the Zn site and Cu2+/ 3+ ions are magnetically
polarized. RIXS experiments at Cu L-3 edge show strong d-d excitations
due to localized nature of Cu ions in the ZnO matrix. (C) 2010 American
Institute of Physics. {[}doi: 10.1063/1.3372758]}},
Publisher = {{AMER INST PHYSICS}},
Address = {{1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA}},
Type = {{Article}},
Language = {{English}},
Affiliation = {{Thakur, P (Corresponding Author), European Synchrotron Radiat Facil, BP 220, F-38043 Grenoble, France.
Thakur, P.; Bisogni, V.; Cezar, J. C.; Brookes, N. B., European Synchrotron Radiat Facil, F-38043 Grenoble, France.
Ghiringhelli, G., Politecn Milan, Dipartimento Fis, CNR, INFM Coherentia & Soft, I-20133 Milan, Italy.
Gautam, S.; Chae, K. H., Korea Inst Sci & Technol, Nano Anal Ctr, Seoul 136791, South Korea.
Subramanian, M.; Jayavel, R., Anna Univ, Ctr Crystal Growth, Madras 600025, Tamil Nadu, India.
Asokan, K., Inter Univ Accelerator Ctr, New Delhi 110067, India.}},
DOI = {{10.1063/1.3372758}},
Article-Number = {{103915}},
ISSN = {{0021-8979}},
EISSN = {{1089-7550}},
Keywords-Plus = {{EMISSION-SPECTROSCOPY; FERROMAGNETISM; SEMICONDUCTORS; PHOTOEMISSION;
EXCITATIONS; STATES; EDGE}},
Research-Areas = {{Physics}},
Web-of-Science-Categories = {{Physics, Applied}},
Author-Email = {{thakur@esrf.fr}},
ResearcherID-Numbers = {{Chae, Keun Hwa/H-2459-2016
Kandasami, Asokan/A-6035-2009
Brookes, Nicholas B/C-6718-2019
Gautam, Sanjeev/C-8735-2011
Cezar, Julio Criginski/D-5039-2012
Kandasami, Asokan/H-3865-2019
Criginski Cezar, Julio/B-2731-2008
Chae, Keun Hwa/D-1191-2011
Ghiringhelli, Giacomo/D-1159-2014
Ramasamy, Jayavel/R-8016-2018
Munisamy, Subramanian/K-8068-2012
Thakur, Pardeep Kumar/A-8328-2012}},
ORCID-Numbers = {{Chae, Keun Hwa/0000-0003-3894-670X
Kandasami, Asokan/0000-0002-0613-219X
Brookes, Nicholas B/0000-0002-1342-9530
Gautam, Sanjeev/0000-0003-3123-9906
Cezar, Julio Criginski/0000-0002-7904-6874
Kandasami, Asokan/0000-0002-1602-765X
Chae, Keun Hwa/0000-0003-3894-670X
Ghiringhelli, Giacomo/0000-0003-0867-7748
Ramasamy, Jayavel/0000-0001-6270-1484
Thakur, Pardeep Kumar/0000-0002-9599-0531}},
Number-of-Cited-References = {{50}},
Times-Cited = {{36}},
Usage-Count-Last-180-days = {{1}},
Usage-Count-Since-2013 = {{36}},
Journal-ISO = {{J. Appl. Phys.}},
Doc-Delivery-Number = {{603BH}},
Unique-ID = {{ISI:000278182400104}},
DA = {{2020-12-22}},
}
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