by Salluzzo, M., Ghiringhelli, G., Cezar, J. C., Brookes, N. B., De Luca, G. M., Fracassi, F. and Vaglio, R.
Abstract:
The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO(2) planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO(2) planes.
Reference:
Indirect electric field doping of the CuO(2) planes of the cuprate NdBa(2)Cu(3)O(7) superconductor (Salluzzo, M., Ghiringhelli, G., Cezar, J. C., Brookes, N. B., De Luca, G. M., Fracassi, F. and Vaglio, R.), In PHYSICAL REVIEW LETTERS, AMER PHYSICAL SOC, volume 100, 2008.
Bibtex Entry:
@article{ ISI:000253019600072, Author = {Salluzzo, M. and Ghiringhelli, G. and Cezar, J. C. and Brookes, N. B. and De Luca, G. M. and Fracassi, F. and Vaglio, R.}, Title = {{Indirect electric field doping of the CuO(2) planes of the cuprate NdBa(2)Cu(3)O(7) superconductor}}, Journal = {{PHYSICAL REVIEW LETTERS}}, Year = {{2008}}, Volume = {{100}}, Number = {{5}}, Month = {{FEB 8}}, Abstract = {{The mechanism of field-effect doping in the 123 high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO(2) planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric-HTS interface determine the electric field doping of the CuO(2) planes.}}, Publisher = {{AMER PHYSICAL SOC}}, Address = {{ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA}}, Type = {{Article}}, Language = {{English}}, Affiliation = {{Salluzzo, M (Corresponding Author), Univ Naples Federico 2, Dipartimento Sci Fis, CNR INFM COHERENTIA, Via Cinthia, I-80126 Naples, Italy. Salluzzo, M.; De Luca, G. M.; Vaglio, R., Univ Naples Federico 2, Dipartimento Sci Fis, CNR INFM COHERENTIA, I-80126 Naples, Italy. Ghiringhelli, G.; Fracassi, F., Politecn Milan, CNR INFM COHERENTIA, I-20133 Milan, Italy. Ghiringhelli, G.; Fracassi, F., Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy. Cezar, J. C.; Brookes, N. B., European Synchrotron Radiat Facil, F-38043 Grenoble, France.}}, DOI = {{10.1103/PhysRevLett.100.056810}}, Article-Number = {{056810}}, ISSN = {{0031-9007}}, Keywords-Plus = {{THIN-FILMS; YBA2CU3O7-DELTA FILMS; SYSTEMS}}, Research-Areas = {{Physics}}, Web-of-Science-Categories = {{Physics, Multidisciplinary}}, Author-Email = {{salluzzo@na.infn.it}}, ResearcherID-Numbers = {{Criginski Cezar, Julio/B-2731-2008 Brookes, Nicholas B/C-6718-2019 salluzzo, marco/C-5919-2009 Cezar, Julio Criginski/D-5039-2012 Ghiringhelli, Giacomo/D-1159-2014}}, ORCID-Numbers = {{Brookes, Nicholas B/0000-0002-1342-9530 salluzzo, marco/0000-0001-8372-6963 Cezar, Julio Criginski/0000-0002-7904-6874 Ghiringhelli, Giacomo/0000-0003-0867-7748}}, Number-of-Cited-References = {{24}}, Times-Cited = {{34}}, Usage-Count-Last-180-days = {{0}}, Usage-Count-Since-2013 = {{22}}, Journal-ISO = {{Phys. Rev. Lett.}}, Doc-Delivery-Number = {{260OM}}, Unique-ID = {{ISI:000253019600072}}, DA = {{2020-12-22}}, }
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